Gate structure in non-volatile memory device

ABSTRACT

A gate structure of a non-volatile memory device and a method of forming the same including a tunnel oxide layer pattern, a charge trap layer pattern, a blocking dielectric layer pattern having the uppermost layer including a material having a first dielectric constant greater than that of a material included in the tunnel oxide layer pattern, and first and second conductive layer patterns. The gate structure includes a first spacer to cover at least the sidewall of the second conductive layer pattern. The gate structure includes a second spacer covering the sidewall of the first spacer and the sidewall of the first conductive layer pattern and including a material having a second dielectric constant equal to or greater than the first dielectric constant. In the non-volatile memory device including the gate structure, erase saturation caused by back tunneling is reduced.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.13/759,195 filed on Feb. 5, 2013 and claims priority under 35 USC §119to Korean Patent Application No. 10-2012-0039915 filed on Apr. 17, 2012in the Korean Intellectual Property Office (KIPO), the entire disclosureof which is incorporated herein by reference.

BACKGROUND

1. Field

Example embodiments relate to a gate structure provided in anon-volatile memory device. More particularly, example embodimentsrelate to a gate structure provided in a charge-trap NAND flash memorydevice.

2. Description of the Related Art

In a charge-trap NAND flash memory device, data is recorded by storingcharges in a charge trap layer pattern serving as an insulator orerasing charges from the charge trap layer pattern. Since thecharge-trap NAND flash memory device can be easily scaled down whilerepresenting superior endurance capability and characteristicuniformity, the charge-trap NAND flash memory device has been studiedand researched for use as a next generation memory.

SUMMARY

Example embodiments provide a gate structure provided in a non-volatilememory device capable of preventing an erase saturation caused by backtunneling.

Example embodiments provide a method of forming the gate structure.

According to example embodiments, there is provided a gate structure.The gate structure includes a tunnel oxide layer pattern and a chargetrap layer pattern sequentially stacked on a substrate. A blockingdielectric layer pattern is formed on the charge trap layer patternhaving an uppermost layer including a material having a first dielectricconstant that is greater than that of a material included in the tunneloxide layer pattern. First and second conductive layer patterns aresequentially stacked on the blocking dielectric layer pattern. A firstspacer covers at least a sidewall of the second conductive layerpattern, and a second spacer covers sidewalls of the first spacer andthe first conductive layer pattern and includes a material having asecond dielectric constant, the second dielectric constant equal to orgreater than the first dielectric constant.

In the example embodiments, a first material including the firstconductive layer pattern may be different from a second materialconstituting the second conductive layer pattern.

In the example embodiments, the first conductive layer pattern may havea first work function and the second conductive layer pattern may have asecond work function that is less than the first work function.

In the example embodiments, the sidewall of the first conductive layerpattern may include a lower portion and an upper portion, the lowerportion may have a first width, and an upper portion may have a secondwidth narrower than the first width.

In the example embodiments, a bottom surface of the first spacer may bespaced apart from and above a top surface of the blocking dielectriclayer pattern by a thin film.

In the example embodiments, a bottom surface of the second spacer may becloser to the substrate than a bottom surface of the first spacer.

In the example embodiments, the uppermost layer of the blockingdielectric layer pattern may include any one of materials selected fromthe group consisting of aluminum oxide (Al₂O₃), hafnium oxide (HfO₂),lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO₃), lanthanumhafnium oxide (LaHfO), hafnium aluminum oxide (HfAlO), titanium oxide(TiO₂), tantalum oxide (Ta₂O₅), and zirconium oxide (ZrO₂).

In the example embodiments, the first spacer may cover the sidewall ofthe second conductive layer pattern and an upper portion of the sidewallof the first conductive layer pattern.

In the example embodiments, the gate structure may further include abuffer conductive layer pattern between the first and second conductivelayer patterns.

In the example embodiments, the buffer conductive layer pattern mayinclude a polysilicon material.

In the example embodiments, the first spacer may cover the sidewall ofthe second conductive layer pattern and a portion of a sidewall of thebuffer conductive layer pattern.

In the example embodiments, the second spacer has an upper portion and alower portion, the lower portion being a portion of the second spacerthat makes contact with the first conductive layer pattern, the lowerportion having a width wider than a width of the upper portion.

According to example embodiments, there is provided a gate structure.The gate structure includes a tunnel oxide layer pattern and a chargetrap layer pattern sequentially stacked on a substrate. A blockingdielectric layer pattern is formed on the charge trap layer pattern andincludes at least one dielectric layer. A barrier metallic layer patternis stacked on the blocking dielectric layer pattern. A metallic layerpattern is formed on the barrier metallic layer pattern. A first spacercovers a sidewall of the metallic layer pattern and an upper sidewall ofthe barrier metallic layer pattern. A second spacer covers a sidewall ofthe first spacer and a lower sidewall of the barrier metallic layerpattern and including a material having a first dielectric constantequal to or greater than a second dielectric constant of an uppermostdielectric layer of the blocking dielectric layer pattern.

In the example embodiments, a bottom surface of the second spacer maydirectly contact a top surface of the blocking dielectric layer pattern.

In the example embodiments, the first spacer may include an insulatingmaterial configured to prevent the sidewall of the metallic layerpattern from being oxidized.

According to example embodiments, there is provided a gate structure.

In one example embodiment, the gate structure includes a substrate, ablocking dielectric layer, a first conductive layer pattern, a secondconductive layer pattern, a first spacer, and a second spacer. Thesubstrate having sequentially formed thereon a tunnel oxide layerpattern and a charge trap layer pattern, the charge trap layer patternconfigured to trap charges therein and the tunnel oxide layer patternincluding a material having a first dielectric constant. The blockingdielectric layer formed on the charge trap layer pattern, the blockingdielectric layer having a top surface that includes an inner portion andan outer portion, the inner portion of the top surface including amaterial having a second dielectric constant, the second dielectricconstant being greater than the first dielectric constant. The firstconductive layer pattern formed on the inner portion of the blockingdielectric layer, the first conductive layer pattern having sidewalls.The second conductive layer pattern formed on the first conductive layerpattern, the second conductive layer pattern including a metallicmaterial having a resistance lower than that of a material included inthe first conductive layer pattern. The first spacer including amaterial having a third dielectric constant, the first spacer enclosingthe second conductive layer to prevent oxidation thereof. The secondspacer formed on the outer portion of the blocking dielectric layer suchthat the spacer covers the sidewalls of the first conductive layerpattern, the second spacer having a third dielectric constant, the thirddielectric constant being greater than or equal to the first dielectricconstant and greater than the second dielectric constant.

In one example embodiment, the first conductive layer pattern has a topsurface that includes an inner conductive portion and an outerconductive portion, the inner conductive portion being in contact withthe second conductive layer pattern and the outer conductive portionbeing in contact with a bottom surface of the first spacer.

In one example embodiment, a bottom surface of the second spacer iscloser to the substrate than the bottom surface of the first spacer.

In one example embodiment, the bottom surface of the second spacer iswider than a top surface of the second spacer.

In one example embodiment, the gate structure further includes a bufferconductive layer pattern formed between the first conductive layerpattern and the second conductive layer pattern, the buffer conductivelayer having a top surface that includes an inner buffer portion and anouter buffer portion. The inner buffer portion is in contact with thesecond conductive layer pattern and the outer conductive portion is incontact with a bottom surface of the first spacer, and the bufferconductive layer pattern has a thickness that is greater than athickness of the first conductive layer pattern.

According to example embodiments, there is provided a method of forminga gate structure. A tunnel oxide layer and a charge trap layer aresequentially formed on a substrate. A blocking dielectric layerincluding the uppermost layer including a high dielectric material isformed on the charge trap layer. First and second conductive layer areformed on the blocking dielectric layer. A second conductive layerpattern is formed by patterning the second conductive layer. A firstspacer is formed on the sidewall of the second conductive layer pattern.A first conductive layer pattern is formed by patterning the firstconductive layer. A second spacer is formed to cover the sidewall of thefirst spacer and the sidewall of the first conductive layer pattern. Thesecond spacer has a first dielectric constant equal to or greater than asecond of the uppermost layer of the blocking dielectric layer. Inaddition, a tunnel oxide layer pattern, a charge trap layer pattern, anda blocking dielectric layer pattern are formed by patterning the tunneloxide layer, the charge trap layer, and the blocking dielectric layer.

In example embodiments, a preliminary first conductive layer pattern maybe formed by etching a portion of the first conductive layer during theprocess of patterning the second conductive layer.

In example embodiments, the first conductive layer may be patternedthrough an isotropic etching process so that the sidewall of the firstconductive layer pattern is formed inward from the sidewall of the firstspacer.

In example embodiments, after forming the first conductive layerpattern, a process of isotropic-etching the sidewall of the firstconductive layer pattern by a predetermined thickness may beadditionally performed.

According to example embodiments, a buffer conductive layer is formedbetween the first and second conductive layers. The buffer conductivelayer pattern is formed by patterning the buffer conductive layer.

In example embodiments, during the process of patterning the secondconductive layer, a preliminary buffer conductive layer pattern may beformed by etching a portion of the buffer conductive layer.

In example embodiments, the first spacer may cover the sidewall of thesecond conductive layer pattern and a portion of the sidewall of thebuffer conductive layer pattern.

In example embodiments, the material including the uppermost layer ofthe blocking dielectric layer pattern may include any one selected fromthe group consisting of aluminum oxide (Al₂O₃), hafnium oxide (HfO₂),lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO₃), lanthanumhafnium oxide (LaHfO), hafnium aluminum oxide (HfAlO), titanium oxide(TiO₂), tantalum oxide (Ta₂O₅), and zirconium oxide (ZrO₂).

According to example embodiments, the non-volatile memory deviceemploying the gate structure prevents an erase saturation caused by backtunneling. Therefore, a non-volatile memory device having highperformance can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1 a to 19 represent non-limiting, example embodiments asdescribed herein.

FIG. 1A is a cross-sectional view illustrating a gate structure providedin a non-volatile memory device according to a first example embodiment;

FIGS. 1B and 1C are cross-sectional views illustrating a gate structureprovided in a non-volatile memory device according to modified exampleembodiments;

FIGS. 2A to 2E are cross-sectional views illustrating a method offorming the gate structure of FIG. 1A;

FIG. 3 is a cross-sectional view illustrating a gate structure providedin a non-volatile memory device according to a second exampleembodiment;

FIGS. 4A and 4B are cross-sectional views illustrating a method offorming the gate structure of FIG. 3;

FIG. 5 is a cross-sectional view illustrating a gate structure providedin a non-volatile memory device according to a third example embodiment;

FIGS. 6A to 6E are cross-sectional views illustrating a method offorming the gate structure of FIG. 5;

FIG. 7 is a cross-sectional view illustrating a non-volatile memorydevice according to one example embodiment;

FIGS. 8A and 8B are cross-sectional views illustrating a method offabricating the non-volatile memory device of FIG. 7;

FIG. 9A is a cross-sectional view illustrating a vertical typenon-volatile memory device according to another example embodiment;

FIG. 9B is an enlarged view illustrating a part A of FIG. 9A;

FIG. 10 is a cross-sectional view illustrating a vertical typenon-volatile memory device according to another example embodiment;

FIG. 11A is a cross-sectional view illustrating a vertical typenon-volatile memory device according to another example embodiment;

FIG. 11B is an enlarged view illustrating a part A of FIG. 11A;

FIG. 12A is a perspective view showing a part of a vertical gate typenon-volatile memory device according to another example embodiment;

FIG. 12B is a plan view of FIG. 12A;

FIGS. 13A and 13B are perspective views showing a method of fabricatingthe vertical gate type non-volatile memory device of FIG. 12A;

FIG. 14A is a perspective view showing a part of a vertical gate typenon-volatile memory device according to one example embodiment;

FIG. 14B is a plan view of FIG. 14A;

FIGS. 15A and 15B are perspective views showing a method of fabricatingthe vertical gate type non-volatile memory device of FIG. 14A;

FIG. 16A is a perspective view showing a part of a vertical gate typenon-volatile memory device according to another example embodiment;

FIG. 16B is a plan view of FIG. 16A;

FIGS. 17A to 17C are perspective views showing a method of fabricatingthe vertical gate type non-volatile memory device of FIG. 16A;

FIG. 18A is a perspective view showing a part of a vertical gate typenon-volatile memory device according to another example embodiment;

FIG. 18B is a plan view of FIG. 18A; and

FIG. 19 is a block diagram illustrating a memory system provided withthe non-volatile memory device according to example embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Various example embodiments will be described more fully hereinafterwith reference to the accompanying drawings, in which some exampleembodiments are shown. The present inventive concepts may, however, beembodied in many different forms and should not be construed as limitedto the example embodiments set forth herein. Rather, these exampleembodiments are provided so that this description will be thorough andcomplete, and will fully convey the scope of the present inventiveconcepts to those skilled in the art. In the drawings, the sizes andrelative sizes of layers and regions may be exaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like numerals refer to likeelements throughout. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present inventive concepts.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the example term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularexample embodiments only and is not intended to be limiting of thepresent inventive concepts. As used herein, the singular forms “a,” “an”and “the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It will be further understood thatthe terms “comprises” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized example embodiments (and intermediate structures). As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, example embodiments should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofthe present inventive concepts.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which these inventive concepts belongs.It will be further understood that terms, such as those defined incommonly used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein.

Hereinafter, example embodiments will be described in detail withreference to the accompanying drawings.

Embodiment 1

FIG. 1A is a cross-sectional view illustrating a gate structure providedin a non-volatile memory device according to a first example embodiment,and FIGS. 1B and 1C are cross-sectional views illustrating a gatestructure provided in a non-volatile memory device according to modifiedexample embodiments.

Referring to FIG. 1A, a gate structure includes a tunnel oxide layerpattern 102 a, a charge trap layer pattern 104 a, a blocking dielectriclayer pattern 108, first and second conductive layer patterns 110 b and112 a, respectively, and a hard mask pattern 114 a which aresequentially stacked on a semiconductor substrate 100. In addition, thegate structure includes first and second spacers 116 and 118,respectively, formed on a sidewall of the stacked structure.

The semiconductor substrate 100 may include a silicon substrate, agermanium substrate, a silicon-germanium substrate, asilicon-on-insulator (SOI) substrate, or a germanium-on-insulator (GOI)substrate. Although not illustrated in drawings, the semiconductorsubstrate 100 may further include a well having P-type impurities orN-type impurities.

The tunnel oxide layer pattern 102 a may include silicon oxide.

The charge trap layer pattern 104 a may include a material to trapcharges. For example, according to one example embodiment, the chargetrap layer pattern 104 a may include silicon nitride.

The blocking dielectric layer pattern 108 may include a high dielectriclayer having a high dielectric constant. The high dielectric layer mayinclude a material having a dielectric constant greater than that ofsilicon oxide. Since the dielectric constant of silicon oxide formedthrough a thermal oxidation process is about 3.9, the high dielectriclayer may include a material having the dielectric constant of at least3.9. Examples of materials used for the high dielectric layer mayinclude aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), lanthanum oxide(La₂O₃), lanthanum aluminum oxide (LaAlO₃), lanthanum hafnium oxide(LaHfO), hafnium aluminum oxide (HfAlO), titanium oxide (TiO₂), tantalumoxide (Ta₂O₅), zirconium oxide (ZrO₂), etc. The above materials may beused alone or in a combination thereof.

The blocking dielectric layer pattern 108 may include only a highdielectric layer. Alternately, the blocking dielectric layer pattern 108may have a multi-layer structure including various oxides, nitrides, oroxynitrides in addition to the high dielectric layer. In this case, theuppermost part of the blocking dielectric layer pattern 108 may beprovided as the high dielectric layer.

In some example embodiments, as illustrated in FIG. 1A, the blockingdielectric layer pattern 108 may have a structure in which a first highdielectric layer 108 a, a silicon oxide layer 108 b, and a second highdielectric layer 108 c are stacked on each other.

In some modified example embodiments, as illustrated in FIG. 1B, theblocking dielectric layer pattern 108 may have a structure in which afirst silicon oxide layer 109 a, a first high dielectric layer 109 b, asecond silicon oxide layer 109 c, and a second high dielectric layer 109d are stacked on each other.

In other modified example embodiments, as illustrated in FIG. 1C, theblocking dielectric layer pattern 108 may include only the first highdielectric layer.

The first and second conductive layer patterns 110 b and 112 a formed onthe blocking dielectric layer pattern 108 may serve as a control gateelectrode.

The first and second conductive layer patterns 110 b and 112 a mayinclude a metallic material. In some example embodiments, the firstconductive layer pattern 110 b may include a barrier metallic layer, andthe second conductive layer pattern 112 a may include metal. In otherwords, the second conductive layer pattern 112 a has resistance lowerthan that of the first conductive layer pattern 110 b, and actuallyserves as a wiring line. Accordingly, as illustrated in FIG. 1 a, thesecond conductive layer pattern 112 a is thicker than the firstconductive layer pattern 110 b. Examples of materials used for the firstconductive layer pattern 110 b may include titanium (Ti), titaniumnitride (TiN), tantalum (Ta), or tantalum nitride (Ta₂N). The abovematerials may be used alone or in a combination thereof. For example,the second conductive layer pattern 112 a may include tungsten (W).

Meanwhile, since the high dielectric layer is formed at the uppermostpart of the blocking dielectric layer pattern 108, when polysiliconmakes direct contact with an upper portion of the high dielectric layer,a Fermi level pinning may undesirably occur. Therefore, the use ofpolysilicon for the first conductive layer pattern 110 b is undesirablebecause of direct contact with the blocking dielectric layer pattern108.

In addition, the threshold voltage characteristic of a cell transistormay be varied according to a first work function of the first conductivelayer pattern 110 b that direct contacts with the blocking dielectriclayer pattern 108. Preferably, the first work function may be greaterthan 4.0 eV. In addition, the first work function may be greater than asecond work function of the second conductive layer pattern 112 a.

A sidewall of the first conductive layer pattern 110 b does not have acontinuous flat surface, but laterally protrudes at the lower portionthereof. Therefore, the lower portion of the first conductive layerpattern 110 b has a first width, and the upper portion of the firstconductive layer pattern 110 b has a second width narrower than thefirst width. The protrusion part of the first conductive layer pattern110 b may have a flat top surface.

The second conductive layer pattern 112 a has a flat surfacecontinuously extending from an upper sidewall of the first conductivelayer pattern 110 b. For example, the second conductive layer pattern112 a may have the second width such that the width of the secondconductive layer pattern 112 a is equal to the width of the upperportion of the first conductive layer pattern 110 b.

The hard mask pattern 114 a may include silicon nitride.

The first spacer 116 is formed on a top surface of the protrusion partof the first conductive layer pattern 110 b while being formed on bothof a sidewall of the second conductive layer pattern 112 a and asidewall of the upper portion of the first conductive layer pattern 110b. The first spacer 116 may have a width equal to that of the protrusionpart of the first conductive layer pattern 110 b. Therefore, the firstspacer 116 is spaced apart from a top surface of the blocking dielectriclayer pattern 108 while being provided higher relative to the substrate100 than the top surface of the blocking dielectric layer pattern 108.Therefore, the first spacer 116 does not make direct contact with theblocking dielectric layer pattern 108. The first spacer 116 prevents thesidewalls of the first and second conductive layer patterns 110 b and112 a, which includes a metallic material, from being oxidized.Accordingly, the first spacer 116 may include silicon nitride.

The second spacer 118 makes contact with both of a sidewall of the firstspacer 116 and the sidewall of the protrusion part of the firstconductive layer pattern 110 b. In addition, a bottom surface of thesecond spacer 118 makes direct contact with a thin film formed at theuppermost part of the blocking dielectric layer pattern 108. The bottomsurface of the second spacer 118 is positioned lower than a bottomsurface of the first spacer 116. The second spacer 118 has a firstdielectric constant equal to or greater than a second dielectricconstant of the thin film positioned at the uppermost part of theblocking dielectric layer pattern 108. In addition, the second spacer118 includes a material different from that of the first spacer 116, andhas the first dielectric constant greater than a that of the firstspacer 116. In other words, the second spacer 118 has the firstdielectric constant equal to or greater than that of the second highdielectric layer. Example of materials used for the second spacer 118may include aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), lanthanumoxide (La₂O₃), lanthanum aluminum oxide (LaAlO₃), lanthanum hafniumoxide (LaHfO), hafnium aluminum oxide (HfAlO), titanium oxide (TiO₂),tantalum oxide (Ta₂O₅), zirconium oxide (ZrO₂), etc. The above materialscan be used alone or in a combination thereof. The second spacer 118 mayselectively include materials having the first dielectric constant equalto or greater than that of a material constituting the second highdielectric layer. As described above, a bottom surface and a lateralside of the first conductive layer pattern 110 b are surrounded by adielectric layer having a high dielectric constant.

In the non-volatile memory device, data is recorded by storing chargesinto the charge trap layer pattern 104 a of the gate structure orerasing charges from the charge trap layer pattern 104 a.

In the erasing operation, electrons trapped in the charge trap layerpattern 104 a are drawn out through the tunnel oxide layer pattern 102 aand erased by applying erase voltage to the second conductive layerpattern 112 a serving as a control gate. In the erasing operation, whenhigh negative voltage is applied to the second conductive layer pattern112 a, charges may be drawn out from the charge trap layer pattern 104 athrough the tunnel oxide layer pattern 102 a, but electrons existing inthe second conductive layer pattern 112 a may be back-tunneled throughthe blocking dielectric layer and introduced into the charge trap layerpattern 104 a. As described above, in example embodiments, in theerasing operation charges are not introduced into the charge trap layerpattern 104 a through the back tunneling, which is called an erasesaturation.

In order to prevent charges from being introduced into the charge traplayer pattern 104 a through the back tunneling, the blocking dielectriclayer pattern 108 that directly contacts the first conductive layerpattern 110 b preferably includes a material having the high dielectricconstant, so that a high tunnel barrier is formed. In addition,preferably, an electric field is uniformly generated between the firstconductive layer pattern 110 b and the blocking dielectric layer pattern108, so that the electric field is prevented from being concentrated ona particular region.

In the present example embodiment, the bottom surface and the lateralside of the first conductive layer pattern 110 b are surrounded by adielectric layer having a high dielectric constant. In particular, thesecond spacer 118 including a material having a high dielectric constantis formed on the sidewall of the first conductive layer pattern 110 b,thereby uniformly generating an electric field at an edge region of thefirst conductive layer pattern 110 b, so that the electric field is notconcentrated on the edge region of the first conductive layer pattern110 b. Accordingly, the back tunneling caused by the concentration ofthe electric field on the edge region of the first conductive layerpattern 110 b may be reduced, so that the non-volatile memory devicerepresent an improved erasing operation characteristic.

FIGS. 2A to 2E are cross-sectional views illustrating a method offorming the gate structure of FIG. 1 a.

Referring to FIG. 2A, a tunnel oxide layer 102, a charge trap layer 104,and a blocking dielectric layer 106 are sequentially formed on asemiconductor substrate 100.

The tunnel oxide layer 102 may include silicon oxide, and may be formedthrough a thermal oxidation process. According to another exampleembodiment, the tunnel oxide layer 102 may be formed by performing achemical vapor deposition (CVD) process, an atomic layer deposition(ALD) process, or a sputtering process.

The charge trap layer 104 may include silicon nitride and may be formedby performing a CVD process, an ALD process, or a sputtering process.

The blocking dielectric layer 106 may have a stacked structure includinga high dielectric layer at the uppermost part thereof. For example, asillustrated in FIG. 2A, the blocking dielectric layer 106 may be formedby sequentially depositing a first high dielectric layer 106 a, asilicon oxide layer 106 b, and a second high dielectric layer 106 c.

The first high dielectric layer 106 a may be formed by performing a CVDprocess, an ALD process, or a sputtering process. The first highdielectric layer 106 a may include a high dielectric material. Exampleof the high dielectric materials used for the first high dielectriclayer 106 a may include aluminum oxide (Al₂O₃), hafnium oxide (HfO₂),lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO₃), lanthanumhafnium oxide (LaHfO), hafnium aluminum oxide (HfAlO), titanium oxide(TiO₂), tantalum oxide (Ta₂O₅), zirconium oxide (ZrO₂), etc. The highdielectric materials can be used alone or in a combination thereof.

The silicon oxide layer 106 b may be formed by performing a CVD process,an ALD process, or a sputtering process.

The second high dielectric layer 106 c may be formed by performing a CVDprocess, an ALD process, or a sputtering process. The second highdielectric layer 106 c may include a high dielectric material. Exampleof the high dielectric materials used for the second high dielectriclayer 106 c may include such as silicon nitride using aluminum oxide(Al₂O₃), hafnium oxide (HfO₂), lanthanum oxide (La₂O₃), lanthanumaluminum oxide (LaAlO₃), lanthanum hafnium oxide (LaHfO), hafniumaluminum oxide (HfAlO), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅),zirconium oxide (ZrO₂), etc. The high dielectric materials can be usedalone or in a combination thereof. In some example embodiments, amaterial used for the second high dielectric layer 106 c may be same ordifferent material then used for the first high dielectric layer 106 a.

Although the present example embodiment is described in that theblocking dielectric layer 106 is formed by depositing the first highdielectric layer 106 a, the silicon oxide layer 106 b, and the secondhigh dielectric layer 106 c, the blocking dielectric layer 106 may havevarious stacked structures. For example, in some example embodiments,the blocking dielectric layer 106 may be formed by sequentiallydepositing a first silicon oxide layer, a first high dielectric layer, asecond silicon oxide layer, and a second high dielectric layer while insome example embodiments, the blocking dielectric layer 106 may includeonly a high dielectric layer.

Thereafter, a first conductive layer 110, a second conductive layer 112,and a hard mask layer 114 are formed on the blocking dielectric layer106.

The first conductive layer 110 may be formed by depositing metallicmaterials. Examples of the metallic materials used for the firstconductive layer 110 may include titanium (Ti), titanium nitride (TiN),tantalum (Ta), tantalum nitride (Ta₂N), etc. The above metallicmaterials may be used alone or in a stacked form including at least twomaterials. The first conductive layer 110 serves as a barrier metalliclayer.

The second conductive layer 112 may include tungsten (W). The secondconductive layer 112 is thicker than the first conductive layer 110.

The hard mask layer 114 may be formed by depositing silicon nitride.

Referring to FIG. 2B, the hard mask pattern 114 a is formed bypatterning the hard mask layer 114 using a photoresist pattern.

The second conductive layer 112 is etched by using the hard mask pattern114 a so that a top surface of the first conductive layer 110 isexposed. Subsequently, a portion of the first conductive layer 110provided under the second conductive layer 112 is etched. The second andfirst conductive layers 110 and 112 may be etched through an anisotropicetching process. In example embodiments, only the second conductivelayer 112 need be etched through the anisotropic etching process.However, when the etching process is actually performed, an over etchingprocess must be performed in order to etch the entire exposed portion ofthe second conductive layer 112. In this case, the exposed top surfaceof the first conductive layer 110 may be partially etched to form apreliminary first conductive layer pattern 110 a.

After the above etching process has been performed, a second conductivelayer pattern 112 a and the preliminary first conductive layer pattern110 a are formed.

Referring to FIG. 2C, the first spacer 116 is formed from a first spacerlayer (not illustrated). The first spacer layer is formed on thesurfaces of the second conductive layer pattern 112 a, the preliminaryfirst conductive layer pattern 110 a, and the hard mask pattern 114 a.The first spacer layer is formed to prevent the sidewall of the secondconductive layer pattern 112 a from being oxidized. The first spacerlayer may be formed by depositing silicon nitride.

The first spacer 116 is formed by anisotropic-etching the first spacerlayer. The first spacer 116 is formed on the sidewall of the secondconductive layer pattern 112 a and the sidewall of the preliminary firstconductive layer pattern 110 a.

Referring to FIG. 2D, the first conductive layer pattern 110 b is formedby anisotropic-etching the preliminary first conductive layer pattern110 a using both of the first spacer 116 and the hard mask pattern 114 aas an etching mask. In the above etching process, a portion or theentire portion of the second high dielectric layer 106 c, which isexposed under the preliminary first conductive layer pattern 110 a, maybe etched.

The lower portion of the first conductive layer pattern 110 b protrudesin a lateral direction. The first conductive layer pattern 110 b isformed on the sidewall thereof with the first spacer 116. The lowerportion of the first conductive layer pattern 110 b has the first widthand the upper portion of the first conductive layer pattern 110 b hasthe second width narrower than the first width.

Referring to FIG. 2E, the second spacer 1180 is formed from a secondspacer layer (not illustrated). The second spacer layer is formed on thesurface of the first spacer 116, the second high dielectric layer 106 c,and the hard mask pattern 114 a. The second spacer layer has a firstdielectric constant equal to or greater than a second dielectricconstant of the second high dielectric layer 106 c formed at theuppermost part of the blocking dielectric layer 106. Example ofmaterials used for the second spacer layer may include aluminum oxide(Al₂O₃), hafnium oxide (HfO₂), lanthanum oxide (La₂O₃), lanthanumaluminum oxide (LaAlO₃), lanthanum hafnium oxide (LaHfO), hafniumaluminum oxide (HfAlO), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅),zirconium oxide (ZrO₂), etc. The above materials may be used alone or ina combination thereof. The second spacer layer may selectively include amaterial having the first dielectric constant equal to or greater thanthe second dielectric constant among the above materials.

Thereafter, the second spacer 118 is formed on both of the sidewall ofthe first spacer 116 and the sidewall of the protrusion part of thefirst conductive layer pattern 110 b by anisotropic-etching the secondspacer layer.

Subsequently, as illustrated in FIG. 1A, the second high dielectriclayer 106 c, the silicon oxide layer 106 b, the first high dielectriclayer 106 a, the charge trap layer 104, and the tunnel oxide layer 102,which are provided under the second spacer 118 and the hard mask pattern114 a, are etched by using both of the second spacer 118 and the hardmask pattern 114 a as an etching mask. Accordingly, the tunnel oxidelayer pattern 102 a, the charge trap layer pattern 104 a, and theblocking dielectric layer pattern 108 are formed.

The gate structure is formed by performing the above processes.

Thereafter, although not illustrated in drawings, an impurity region isformed at the upper portion of the semiconductor substrate 100, which isadjacent to the gate structure, by an ion implantation process using thegate structure as an ion implantation mask. Through the above processes,a cell transistor of the non-volatile memory device may be manufactured.

Embodiment 2

FIG. 3 is a cross-sectional view illustrating a gate structure providedin a non-volatile memory device according to a second exampleembodiment.

The gate structure according to the present example embodiment has thesame as the gate structure according to the first example embodimentexcept the present example embodiment does not have the first conductivelayer pattern 110 b and the second spacer 118. Instead, the presentexample embodiment includes a first conductive layer pattern 111 and asecond spacer 118 a that have shapes that differ from the firstconductive layer pattern 110 b and the second spacer 118, respectively.

Referring to FIG. 3, similarly to the gate structure described in thefirst example embodiment, the gate structure according to the presentexample embodiment includes the tunnel oxide layer pattern 102 a, thecharge trap layer pattern 104 a, the blocking dielectric layer pattern108, first and second conductive layer patterns 111 and 112 a, and thehard mask pattern 114 a which are sequentially stacked on thesemiconductor substrate 100. In addition, the gate structure includesfirst and second spacers 116 and 118 a formed on a sidewall of thestacked structure.

The tunnel oxide layer pattern 102 a, the charge trap layer pattern 104a, and the blocking dielectric layer pattern 108, which are formed onthe semiconductor substrate 100, have the same structures as thoseaccording to the first example embodiment.

The first and second conductive layer patterns 111 and 112 a formed onthe blocking dielectric layer pattern 108 serve as a control gateelectrode. The materials constituting the first and second conductivelayer patterns 111 and 112 a are the same as the materials constitutingthe first and second conductive layer patterns 110 b and 112 a describedaccording to the first example embodiment.

The first spacer 116 is positioned on both of the entire sidewall of thesecond conductive layer pattern 112 a and the upper portion of sidewallof the first conductive layer pattern 111. The materials constitutingthe first spacer 116 are the same as the materials constituting thefirst spacer 116 described according to the first example embodiment.

The sidewall of the first conductive layer pattern 111 maydiscontinuously aligned with respect to the sidewall of the first spacer116, and may be formed inward from the sidewall of the first spacer 116.In other words, the first conductive layer pattern 111 may not beprovided under the bottom surface of the first spacer 116. The firstconductive layer pattern 111 may be undercut from the bottom surface ofthe first spacer 116.

The second spacer 118 a covers the surface of the first spacer 116, andthe sidewalls of the first conductive layer pattern 111. The secondspacer 118 a is filled in a region provided under the bottom surface ofthe first spacer 116. Therefore, the second spacer 118 a formed on thesidewall of the first conductive layer pattern 111 has a width widerthan that of the second spacer 118 a formed on the sidewall of the firstspacer 116. The materials constituting the second spacer 118 a are thesame as the materials constituting the second spacer described accordingto the first example embodiment.

As described above, the bottom surface and the lateral side of the firstconductive layer pattern 111 is surrounded by a dielectric layer havinga high dielectric constant. Accordingly, the back tunneling caused bythe concentration of the electric field on the edge region of the firstconductive layer pattern 111 is reduced, so that the non-volatile memorydevice represent an improved erasing operation characteristic.

FIGS. 4A and 4B are cross-sectional views illustrating a method offorming the gate structure of FIG. 3.

First, the structure illustrated in FIG. 2C is formed by performing theprocesses the same as those described with reference to FIGS. 2A to 2C.

Referring to FIGS. 2C and 4A, the preliminary first conductive layerpattern 110 a is isotropic-etched by using both of the first spacer 116and the hard mask pattern 114 a as an etching mask. When the aboveisotropic etching process is performed, the preliminary first conductivelayer pattern 110 a provided under the bottom surface of the firstspacer 116 is etched to have a shape undercut from the bottom surface ofthe first spacer 116, thereby forming the first conductive layer pattern111.

Referring to FIG. 4B, the second spacer 118 a is formed from a secondspacer layer (not illustrated). The second spacer layer is formed on thesurface of the first spacer 116, and the second high dielectric layer106 c and the hard mask pattern 114 a. The second spacer layer has afirst dielectric constant equal to or greater than a second dielectricconstant of the second high dielectric layer 106 c positioned at theuppermost part of the blocking dielectric layer. The second spacer layeris filled in an undercut region provided under the bottom surface of thefirst spacer 116.

Thereafter, the second spacer 118 a is formed on the sidewalls of thefirst spacer 116 and the first conductive layer pattern 111 byanisotropic-etching the second spacer layer.

As illustrated in drawings, since the sidewall of the first conductivelayer pattern 111 is formed inward from the sidewall of the first spacer116, the second spacer 118 a has a wider width on the sidewall of thefirst conductive layer pattern 111.

Subsequently, as illustrated in FIG. 3, the second high dielectric layer106 c, the silicon oxide layer 106 b, the first high dielectric layer106 a, the charge trap layer 104, and the tunnel oxide layer 102, whichare provided under the second spacer 118 a and the hard mask pattern 114a, are etched by using both of the second spacer 118 a and the hard maskpattern 114 a as an etching mask. Accordingly, the tunnel oxide layerpattern 102 a, the charge trap layer pattern 104 a, and the blockingdielectric layer pattern 108 are formed.

The gate structure is formed by performing the above processes.

Hereinafter, another method of forming the gate structure illustrated inFIG. 3 will be described.

First, the structure illustrated in FIG. 2 d is formed by performing theprocesses the same as those described with reference to FIGS. 2 a to 2d.

As illustrated in 4 a, the first conductive layer pattern 110 b isisotropic-etched by using both of the first spacer 116 and the hard maskpattern 114 a as an etching mask. When the above isotropic etchingprocess is performed, the first conductive layer pattern 110 b providedunder the bottom surface of the first spacer 116 may be etched, therebyforming the first conductive layer pattern 111 finally having a shapeundercut from the bottom surface of the first spacer 116.

In other words, the first conductive layer pattern 110 b the same asthat illustrated in FIG. 2 d is formed by anisotropic-etching thepreliminary first conductive layer pattern 110 a illustrated in FIG. 2c. Thereafter, a portion of the sidewall of the first conductive layerpattern 110 b is isotropic-etched, thereby forming the first conductivelayer pattern 111 of FIG. 4 a which is the shape undercut from.

Thereafter, the gate structure of FIG. 3 can be formed by performing theprocesses the same as the processes described with reference to FIG. 4b.

Embodiment 3

FIG. 5 is a cross-sectional view illustrating a gate structure providedin a non-volatile memory device according to a third example embodiment.

Referring to FIG. 5, the gate structure includes the tunnel oxide layerpattern 102 a, the charge trap layer pattern 104 a, the blockingdielectric layer pattern 108, a first conductive layer pattern 110 c, abuffer conductive layer pattern 130 b, a second conductive layer pattern132 a, and the hard mask pattern 114 a which are sequentially stacked onthe semiconductor substrate 100. In addition, the gate structureincludes first and second spacers 116 a and 118 b, respectively, formedon a sidewall of the stacked structure.

The tunnel oxide layer pattern 102 a, the charge trap layer pattern 104a, and the blocking dielectric layer pattern 108, which are formed onthe semiconductor substrate 100, have the same structures as thoseaccording to the first example embodiment.

The first conductive layer pattern 110 c, the buffer conductive layerpattern 130 b, and the second conductive layer pattern 132 a, which areformed on the blocking dielectric layer pattern 108, serve as a controlgate.

The first conductive layer pattern 110 c may include a metallic materialhaving a work function of at least 4.0 eV. Example of materials used forthe first conductive layer pattern 110 c may include titanium (Ti),titanium nitride (TiN), tantalum (Ta), tantalum nitride (Ta₂N), etc. Theabove materials may be used alone or in a combination thereof.

Since the high dielectric layer is formed at the uppermost part of theblocking dielectric layer pattern 108, when polysilicon makes directcontact with an upper portion of the high dielectric layer, a Fermilevel pinning may undesirably occur. Therefore, the use of polysiliconfor the first conductive layer pattern 110 c making direct contact withthe blocking dielectric layer pattern 108 is undesirable.

The buffer conductive layer pattern 130 b may include polysilicon. Thebuffer conductive layer pattern 130 b is provided to easily perform aprocess of etching a gate electrode. Therefore, the buffer conductivelayer pattern 130 b may be thicker than the first conductive layerpattern 110 c. The buffer conductive layer pattern 130 b may be dopedwith impurities so that the buffer conductive layer pattern 130 b isconductive.

A sidewall of the buffer conductive layer pattern 130 b does not have acontinuous flat surface, but protrudes at the lower portion thereof.Therefore, the lower portion of the buffer conductive layer pattern 130b has the first width, and the upper portion of the buffer conductivelayer pattern 130 b has the second width narrower than the first width.The protrusion part of the buffer conductive layer pattern 130 b mayhave a flat top surface.

The second conductive layer pattern 132 a has a flat surfacecontinuously extending from an upper sidewall of the buffer conductivelayer pattern 130 b. For example, the second conductive layer pattern132 a may have the second width. The second conductive layer pattern 132a may serve as a wiring line. Therefore, the second conductive layerpattern 132 a may include a metallic material having low resistance.According to one example embodiment, the second conductive layer pattern132 a may include tungsten (W).

The first spacer 116 a is formed on a top surface of the protrusion partof the buffer conductive layer pattern 130 b while being formed on bothof a sidewall of the second conductive layer pattern 132 a and an upperportion of the sidewall of the buffer conductive layer pattern 130 b.The first spacer 116 a may have a width equal to that of the protrusionpart of the buffer conductive layer pattern 130 b. Therefore, the firstspacer 116 a does not make direct contact with the blocking dielectriclayer pattern 108. The first spacer 116 a prevents the sidewalls of thesecond conductive layer pattern 132 a that include a metallic materialfrom being oxidized. Accordingly, the first spacer 116 a may includesilicon nitride (Si₃N₄).

The second spacer 118 b makes contact with the sidewall of the firstspacer 116 a, the sidewall of the protrusion part of the bufferconductive layer pattern 130 b, and the sidewall of the first conductivelayer pattern 110 c. The bottom surface of the second spacer 118 b ispositioned lower than the bottom surface of the first spacer 116 a.

The second spacer 118 b has a first dielectric constant equal to orgreater than a second dielectric constant of a thin film positioned atthe uppermost part of the blocking dielectric layer pattern 108. Inother words, the second spacer 118 b has the first dielectric constantequal to or greater than that of the second high dielectric layer 108 c.In addition, the material constituting the second spacer 118 b is thesame as the material described according to the first and secondembodiments.

As described above, the bottom surface and the lateral side of the firstconductive layer pattern 110 c is surrounded by a dielectric layerhaving a high dielectric constant. Accordingly, the back tunnelingcaused by the concentration of the electric field on the edge region ofthe first conductive layer pattern 110 c is reduced, so that thenon-volatile memory device represent an improved erasing operationcharacteristic.

FIGS. 6A to 6E are cross-sectional views illustrating a method offorming the gate structure of FIG. 5.

Referring to FIG. 6A, the tunnel oxide layer 102, the charge trap layer104, and the blocking dielectric layer 106 are sequentially formed onthe semiconductor substrate 100. The processes of forming the above thinfilms are the same as those described according to the first exampleembodiment.

The first conductive layer 110 is formed on the blocking dielectriclayer 106. The first conductive layer 110 may be formed by depositingbarrier metallic materials. Examples of the barrier metallic materialsused for the first conductive layer 110 may include titanium (Ti),titanium nitride (TiN), tantalum (Ta), tantalum nitride (Ta₂N), etc. Thebarrier metallic materials may be used alone or a stacked form includingat least two materials. A buffer conductive layer 130 is formed on thefirst conductive layer 110 with a thickness thicker than that of thefirst conductive layer 110. The buffer conductive layer 130 is formed bydepositing polysilicon. A second buffer layer 132 is formed on thebuffer conductive layer 130. The second buffer layer 132 may be formedby depositing a metallic material having low resistance. The hard masklayer 114 is formed on the second conductive layer 132.

Referring to FIG. 6B, the hard mask pattern 114 a is formed bypatterning the hard mask layer 114 using a photoresist pattern.

The second conductive layer 132 is etched by using the hard mask pattern114 a so that the top surface of the buffer conductive layer 130 isexposed. Subsequently, a portion of the buffer conductive layer 130 isetched. The second conductive layer 132 and the buffer conductive layer130 may be etched through an anisotropic etching process. In the aboveetching process, the process condition must be adjusted to etch aportion of the buffer conductive layer 130 by a desired (oralternatively, a predetermined) thickness. Since the buffer conductivelayer 130 may have a thickness that is larger than that of the firstconductive layer 110, an etching stop point can be easily detected inthe etching process.

After the etching process has been performed, the second conductivelayer pattern 132 a and a preliminary buffer conductive layer pattern130 a are formed.

Referring to FIG. 6C, the first spacer 116 a is formed from a firstspacer layer (not illustrated). The first spacer layer is formed on thesurfaces of the second conductive layer pattern 132 a, the preliminarybuffer conductive layer pattern 130 a, and the hard mask pattern 114 a.The first spacer layer may be formed by depositing silicon nitride.

The first spacer 116 a is formed by anisotropic-etching the first spacerlayer. The first spacer 116 a is formed on the sidewall of the secondconductive layer pattern 132 a and the sidewall of the preliminarybuffer conductive layer pattern 130 a.

Referring to FIG. 6D, the preliminary buffer conductive layer pattern130 a and the first conductive layer 110 are anisotropic-etched by usingthe first spacer 116 a and the hard mask pattern 114 a as an etchingmask, thereby forming the buffer conductive layer pattern 130 b and thefirst conductive layer pattern 110 c.

The lower portion of the buffer conductive layer pattern 130 b and thefirst conductive layer pattern 110 c protrude in a lateral direction.

Referring to FIG. 6E, the second spacer 118 b is formed from a secondspacer layer (not illustrated). The second spacer layer is formed on thesurface of the first spacer 116 a, the second high dielectric layer 118b, and the hard mask pattern 114 a. The second spacer layer may includea material the same as that described according to the first and secondembodiments.

Thereafter, the second spacer 118 b is formed on the sidewalls of thefirst spacer 116 a, the first conductive layer pattern 110 c, and aprotrusion part of the buffer conductive layer pattern 130 b byanisotropic-etching the second spacer layer.

Subsequently, as illustrated in FIG. 5, the second high dielectric layer106 c, the silicon oxide layer 106 b, the first high dielectric layer106 a, the charge trap layer 104, and the tunnel oxide layer 102, whichare provided under the second spacer 118 b and the hard mask pattern 114a, are etched by using both of the second spacer 118 b and the hard maskpattern 114 a as an etching mask. Accordingly, the tunnel oxide layerpattern 102 a, the charge trap layer pattern 104 a, and the blockingdielectric layer pattern 108 are formed.

The gate structure may be formed by performing the above processes.

The gate structure according to each example embodiment described aboveis applicable to the non-volatile memory device.

Embodiment 4

FIG. 7 is a cross-sectional view illustrating a non-volatile memorydevice according to an example embodiment.

Referring to FIG. 7, the non-volatile memory device includes gatestructures illustrated in FIG. 1A. The gate structures serve as gates ofa cell transistor 202 and select transistors 204 a and 204 b. First tothird impurity regions 206 a, 206 b, and 206 c, respectively, are formedbetween the gate structures in the semiconductor substrate 100. Inaddition, the non-volatile memory device further includes a commonsource line (CSL) 212 and a bit line 218.

The gate structures have the shape of a line extending in a seconddirection, and are spaced apart from each other in a first directionperpendicular to the second direction.

A first insulating interlayer 210 is formed on the semiconductorsubstrate 100 to cover the gate structure.

The CSL 212 makes contact with the second impurity region 206 b whilepassing through the first insulating interlayer 210. The CSL 212 mayinclude doped polysilicon, metal, or metallic silicide.

A second insulating interlayer 214 is formed on both of the firstinsulating interlayer 210 and the CSL 212. A bit line contact 216 isformed to make contact with the third impurity region 206 c whilepassing through the first and second insulating interlayers 210 and 214.A bit line 218 electrically connected to the bit line contact 216 isformed on the second insulating interlayer 214. The bit line 218 extendsin the first direction.

As described above, the non-volatile memory device including the gatestructure of the example embodiments has improved erase saturationcharacteristics and improved reliability as compared to a conventionalcharge-trap non-volatile memory device.

Although the present example embodiment employs the gate structureaccording to the first example embodiment, the non-volatile memorydevice may employing the gate structures according to the second andthird example embodiments may be provided.

FIGS. 8A and 8B are cross-sectional views illustrating a method offabricating the non-volatile memory device of FIG. 7.

Gate structures are formed on the semiconductor substrate 100 byperforming the processes described with reference to FIGS. 2A to 2E. Thegate structures have the shape of a line extending in the seconddirection.

Referring to FIG. 8A, the first to third impurity regions 206 a, 206 b,and 206 c are formed by implanting impurities into the semiconductorsubstrate 100 formed between the gate structures.

The first insulating interlayer 210 is formed on the semiconductorsubstrate 100 to cover the gate structures. The first insulatinginterlayer 210 may be formed by performing a CVD process, an ALDprocess, or a sputtering process using oxide such as boron phosphoroussilicate glass (BPSG), undoped silicate glass (USG), or spin on glass(SOG).

A first opening (not illustrated) is formed to expose the secondimpurity region 206 b while passing through the first insulatinginterlayer 210, and a conductive layer is formed in the first openingand on the first insulating interlayer 210. The first opening may havethe shape of a line extending in the second direction. The conductivelayer may be formed by using doped polysilicon, metal, or metallicsilicide. The upper portion of the conductive layer is planarized untilthe first insulating interlayer 210 is exposed, thereby forming the CSL212 making contact with the second impurity region 206 b in the firstopening.

Referring to FIG. 8B, the second insulating interlayer 214 is formed onthe first insulating interlayer 210 and the CSL 212. The secondinsulating interlayer 214 may be formed by performing a CVD process, anALD process, or a sputtering process using oxide such as BPSG, USG, orSOG.

Thereafter, as illustrated in FIG. 7, a second opening (not illustrated)is formed to expose the third impurity region 206 c while passingthrough the first and second insulating interlayers 210 and 214, and aconductive layer is formed in the second opening and on the secondinsulating interlayer 214. The conductive layer may be formed by usingdoped polysilicon, metal, or metallic silicide. The upper portion of theconductive layer is planarized until the second insulating interlayer214 is exposed, thereby forming the CSL 216 making contact with thethird impurity region 206 c in the second opening.

In addition, the bit line 218 electrically connected to the bit linecontact 216 is formed by depositing a conductive layer on the secondinsulating interlayer 214 and patterning the conductive layer. The bitline 218 may have a linear shape extending in the second direction. Theconductive layer may be formed by using doped polysilicon, metal, ormetallic silicide.

The non-volatile memory device illustrated in FIG. 7 may be formed byperforming the processes described with reference to FIGS. 8A and 8B.

Embodiment 5

FIG. 9A is a cross-sectional view illustrating a vertical typenon-volatile memory device according to one example embodiment. FIG. 9 bis an enlarged view illustrating a part A of FIG. 9A, shown in a dottedarea of FIG. 9A.

Referring to FIGS. 9A and 9B, the vertical type non-volatile memorydevice may include channel patterns 302 and control gate electrodes 314serving as word lines, the channel patterns 302 and word lines areformed on a substrate 300.

The substrate 300 may include a semiconductor substrate such as asilicon substrate, a germanium substrate, or a silicon-germaniumsubstrate.

The channel patterns 302 may vertically extend from a top surface of thesubstrate 300 with a desired (or alternatively, a predetermined) height.Each channel pattern 302 may have a pillar shape, cylindrical shape or arectangular parallelepiped shape. At least the surface of the channelpattern 302 may include a semiconductor material. For example, theentire portion of the channel pattern 302 may include a semiconductormaterial. Alternately, the outer portion of the channel pattern 302 mayinclude a semiconductor material 302 a, and the inner portion of thechannel pattern 302 may include an insulating material 302 b. Thesemiconductor material 302 a may include single crystal silicon orpolysilicon.

A tunnel oxide layer 304 is formed on the surface of the sidewall of thechannel pattern 302. In addition, a charge trap layer 306 is formed onthe tunnel oxide layer 304. A first blocking dielectric layer 308 isformed on the charge trap layer 306. The first blocking dielectric layer308 may include a plurality of dielectric layers. In some exampleembodiments, the first blocking dielectric layer 308 may include asilicon oxide layer. In some example embodiments, the first blockingdielectric layer 308 may have a structure in which a silicon oxide layerand a first high dielectric layer are stacked on each other.

Insulating interlayer patterns 310 are formed in a lateral direction ofthe channel pattern 302 formed thereon with the first blockingdielectric layer 308. The insulating interlayer patterns 310 arevertically spaced apart from each other. Accordingly, recess parts areformed between the insulating interlayer patterns 310.

A second blocking dielectric layer 312 is formed on the first blockingdielectric layer 308 and the insulating interlayer pattern 310 in therecess parts. In some example embodiments, the second blockingdielectric layer 312 may vertically extend as illustrated in FIG. 9A. Inother example embodiments, the second blocking dielectric layer 312 maybe formed only in the recess parts of the insulating interlayer pattern310.

The second blocking dielectric layer 312 may have a dielectric constantgreater than those of the dielectric layers constituting the firstblocking dielectric layer 308. In other words, a material constitutingthe first blocking dielectric layer 308 may be different from a materialconstituting the second blocking dielectric layer 312. In some exampleembodiments, the second blocking dielectric layer 312 may include amaterial having the highest dielectric constant among materialsconstituting the dielectric layers of the first blocking dielectriclayer 308.

The second blocking dielectric layer 312 includes a first part 312 amaking contact with a sidewall part of the channel pattern 302 and asecond part 312 b protruding from the sidewall part of the channelpattern 302 on the end portion of the first part 312 a.

The second blocking dielectric layer 312 may include a material having adielectric constant of at least 3.9. The second blocking dielectriclayer 312 may include metallic oxide.

Each of the control gate electrodes 314 is formed on the second blockingdielectric layer 312 to fill the recess parts. The control gateelectrodes 314 serve as the word lines. The word lines 314 may have theshape of a multi-layer structure, and may be vertically stacked. Theword lines 314 may include a metallic material.

Each word line 314 may include a barrier metallic layer pattern 314 aand a metallic layer pattern 314 b.

The metallic layer pattern 314 b may include tungsten (W). The barriermetallic layer pattern 314 a may include titanium (Ti), titanium nitride(TiN), tantalum (Ta), or tantalum nitride (Ta₂N). The above materialsmay be used alone or in a combination thereof. The barrier metalliclayer pattern 314 a makes direct contact with the second blockingdielectric layer 312.

As illustrated in FIGS. 9A and 9B, the second blocking dielectric layer312 is disposed between the word line 314 and the first blockingdielectric layer 308. In addition, the second blocking dielectric layer312 makes direct contact with upper and lower portions of the word line314. The second part 312 b of the second blocking dielectric layer 312,which makes contact with the upper and lower portions of the word line314, serves as a second spacer having a high dielectric constantaccording to the first example embodiment.

As described above, the upper and lower portions of the word line 314are surrounded by a dielectric layer having a high dielectric constant.Accordingly, the back tunneling caused by the concentration of theelectric field on the bending portion of the word line 314 is reduced,so that the vertical type non-volatile memory device of the exampleembodiments have improved erasing operation characteristics.

Embodiment 6

FIG. 10 is a cross-sectional view illustrating a vertical typenon-volatile memory device according to another example embodiment.

The vertical type non-volatile memory device of FIG. 10 has the samestructure as that of the vertical type non-volatile memory deviceaccording to the example embodiment of FIG. 9 except the vertical typenon-volatile memory device illustrated in FIG. 10 does not have thefirst blocking dielectric layer pattern 308 and the second blockingdielectric layer pattern 312 and instead of the vertical typenon-volatile memory device illustrated in FIG. 10 has a single blockingdielectric layer 316.

Referring to FIG. 10, the tunnel oxide layer 304 is formed on thesurface of the channel pattern 302. In addition, the charge trap layer306 is formed on the tunnel oxide layer 304.

The insulating interlayer patterns 310 are formed in a lateral directionof the channel pattern 302 formed thereon with the charge trap layer306. The insulating interlayer patterns 310 are vertically spaced apartfrom each other. Accordingly, recess parts are formed between theinsulating interlayer patterns 310.

The blocking dielectric layer 316 is formed on the charge trap layer 306and the insulating interlayer pattern 310 in the recess parts. Theblocking dielectric layer 316 includes a first part 316 a making contactwith the sidewall part of the channel pattern 302 and a second part 316b protruding from the sidewall part of the channel pattern 302 on theend portion of the part 312 a.

The blocking dielectric layer 316 may include a material having adielectric constant of at least 3.9. The blocking dielectric layer 316may include metallic oxide.

Each of the word lines 314 are formed in the recess parts having theblocking dielectric layer 316 therein. Each of the word lines 314 havethe same structure as that described with reference to FIGS. 9A and 9B.

The blocking dielectric layer 316 may include a plurality of dielectriclayers. When the blocking dielectric layer 316 includes a plurality ofdielectric layers, a dielectric layer making direct contact with theword line may have a dielectric constant greater than those of otherdielectric layers.

As described above, the upper and lower portions of the word line 314are surrounded by a dielectric layer having a high dielectric constant.In other words, the second part 316 b of the blocking dielectric layerserves as the second spacer provided with a high dielectric constantaccording to the first example embodiment. Accordingly, the backtunneling caused by the concentration of the electric field in the edgeportions of the word line 314 is reduced, so that the vertical typenon-volatile memory devices of the example embodiments have improvederasing operation characteristics.

Embodiment 7

FIG. 11 a is a cross-sectional view illustrating a vertical typenon-volatile memory device according to another example embodiment. FIG.11B is an enlarged view illustrating a part A of FIG. 11A, shown in adotted area of FIG. 11A.

Referring to FIGS. 11A and 11B, the vertical type non-volatile memorydevice may include channel patterns 302 and control gate electrodes 314serving as word lines, the channel patterns 302 and word lines areformed on the substrate 300.

The substrate 300 may include a semiconductor substrate such as asilicon substrate, a germanium substrate, or a silicon-germaniumsubstrate.

The channel patterns 302 may vertically extend from a top surface of thesubstrate 300 with a desired (or alternatively, a predetermined) height.Each channel pattern 302 may have a pillar shape, a cylindrical shape ora rectangular parallelepiped shape. At least the surface of the channelpattern 302 may include a semiconductor material. For example, theentire portion of the channel pattern 302 may include a semiconductormaterial. Alternately, the outer portion of the channel pattern 302 mayinclude a semiconductor material 302 a, and the inner portion of thechannel pattern 302 may include an insulating material 302 b. Thesemiconductor material 302 a may include single crystal silicon orpolysilicon.

The insulating interlayer patterns 310 are formed in a lateral directionof the channel pattern 302. The insulating interlayer patterns 310 arevertically spaced apart from each other. Accordingly, recess parts areformed between the insulating interlayer patterns 310.

A tunnel oxide layer 304 a is formed on the surface of the channelpattern 302 and the insulating interlayer pattern 310 in the recessparts. The tunnel oxide layer 304 a includes a part making contact withthe channel pattern 302 and a part making contact with the surface ofthe insulating interlayer pattern 310.

A charge trap layer 306 a and a blocking dielectric layer 318 a areformed on the surface of the tunnel oxide layer 304 a. The blockingdielectric layer 318 a may include a material having a dielectricconstant of at least 3.9. The blocking dielectric layer 318 a mayinclude metallic oxide.

The blocking dielectric layer 318 a may include a plurality ofdielectric layers.

Each of the control gate electrodes are formed on the blockingdielectric layer 318 a to fill the recess parts. The control gateelectrodes serve as the word lines 314. The word lines 314 may have theshape of a multi-layer structure, and vertically stacked. The word lines314 may have the same structure as that of the word lines described withreference to FIGS. 9A and 9B.

If the blocking dielectric layer 318 a includes a plurality ofdielectric layers, a dielectric layer making direct contact with theword line 314 may have a dielectric constant greater than those of otherdielectric layers.

As illustrated in FIGS. 11A and 11B, the blocking dielectric layer 318 ahaving a high dielectric constant makes direct contact with upper andlower portions of the word line 314. The blocking dielectric layer 318 amaking contact with the upper and lower portions of the word line 314serves as the second spacer provided with a high dielectric constantaccording to the first example embodiment.

Accordingly, the back tunneling caused by the concentration of theelectric field on the edge portions of the word line 314 is reduced, sothat the vertical type non-volatile memory devices of the exampleembodiments have improved erasing operation characteristics.

Embodiment 8

FIG. 12A is a perspective view showing a part of a vertical gate typenon-volatile memory device according to another example embodiment, andFIG. 12B is a plan view of FIG. 12A.

Referring to FIGS. 12A and 12B, the vertical gate type non-volatilememory device may include channel patterns 402 having a multi-layerstructure and word lines 416 having the shape of pillars which areformed on the substrate 400 while facing the sidewalls of the channelpatterns 402.

The channel patterns 402 have the shape of a line extending in the firstdirection. The channel patterns 402 are stacked while interposing afirst insulating interlayer pattern 404 there between. In other words,first insulating interlayer patterns 404 and the channel patterns 402may be repeatedly and alternately stacked on the substrate. The channelpatterns 402 include a semiconductor material. For example, the channelpatterns 402 may include a single crystal silicon or polysilicon.

Second insulating interlayer patterns 406 having the shape of pillarsare formed at the lateral side of the structure in which the firstinsulating interlayer patterns 404 and the channel patterns 402 arestacked on each other. Openings 408 are defined between the secondinsulating interlayer patterns 406 to expose both sidewalls of thechannel patterns 402.

A tunnel oxide layer 410, a charge trap layer 412, and a blockingdielectric layer 414 are formed on the sidewall of the opening 408 andthe channel pattern 402. The blocking dielectric layer 414 may include aplurality of dielectric layers.

The blocking dielectric layer 414 may include a material having adielectric constant of at least 3.9. The blocking dielectric layer 414may include metallic oxide. When the blocking dielectric layer 414 has amulti-layer structure, the blocking dielectric layer 414 making directcontact with the word line 416 has a dielectric constant greater thanthose of the blocking dielectric layers 414 formed at other layers.

The word lines 416 are formed in the openings 408 while making contactwith the blocking dielectric layers 414. In other words, the word lines416 have the shape of a pillar.

The word lines 416 may include a metallic material. The word line 416may include a barrier metallic layer pattern 416 a and a metallic layerpattern 416 b.

The metallic layer pattern 416 b may include tungsten (W). The barriermetallic layer pattern 416 a may include titanium (Ti), titanium nitride(TiN), tantalum (Ta), or tantalum nitride (Ta₂N). The above materialsmay be used alone or in a combination thereof. The barrier metalliclayer pattern 416 a may make direct contact with the blocking dielectriclayer 414.

The word line 416 is surrounded by the blocking dielectric layer 414. Aportion P of the blocking dielectric layer 414 protruding in a lateraldirection of the channel pattern 402 serves as the second spacerprovided with a high dielectric constant according to the first exampleembodiment. Accordingly, the back tunneling caused by the concentrationof the electric field on the edge portions of the edge region of theword line 416 is reduced, so that the non-volatile memory device of theexample embodiments have improved erasing operation characteristics.

FIGS. 13A and 13B are perspective views showing a method of fabricatingthe vertical gate type non-volatile memory device of FIG. 12A.

Referring to FIG. 13A, a structure that stacks the channel patterns 402and the first insulating interlayer patterns 404 may be formed on asubstrate 100. The structure has the shape of a line extending in thefirst direction.

In some example embodiments, the structure may be formed by sequentiallyforming channel layers and first insulating interlayers and thenpatterning the channel layers and the first insulating interlayers. Inanother example embodiment, the structure may be formed by sequentiallyforming channel layers including a semiconductor material andsacrificial layers, forming a recess parts by removing the sacrificiallayers, and filling first insulating interlayer patterns in the recessparts.

A second insulating interlayer 405 is filled in a gap between structuresdescribed above.

Referring to FIG. 13B, second insulating interlayer patterns 406 areformed in the shape of a pillar while protruding in a lateral directionof the structure by etching a portion of the second insulatinginterlayer 405. The opening 408 is formed between the second insulatinginterlayer patterns 406. The sidewalls of the channel patterns 402 andthe first insulating interlayer patterns are exposed in the openings.

Referring to FIG. 12A again, the tunnel oxide layer 410, the charge traplayer 412, and the blocking dielectric layer 414 are formed on thesidewall of the opening 408 and exposed the channel pattern 402 in theopening 408. The blocking dielectric layer 414 may include a materialhaving a dielectric constant of at least 3.9. The blocking dielectriclayer 414 may include metallic oxide. When the blocking dielectric layer414 has a multi-layer structure, a blocking dielectric layer makingdirect contact with the word line has a dielectric constant greater thanthose of the blocking dielectric layers formed at other layers.

Thereafter, a word line 416 is fully filled in the opening 408 whilemaking contact with the blocking dielectric layer 414.

Embodiment 9

FIG. 14A is a perspective view showing a part of a vertical gate typenon-volatile memory device according to another example embodiment, andFIG. 14B is a plan view of FIG. 14A.

Referring to FIGS. 14A and 14B, the vertical gate type non-volatilememory device may include the channel patterns 402 having a multi-layerstructure and word lines 416 having a shape of pillars which are formedon the substrate 400 while facing the sidewalls of the channel patterns402.

The channel patterns 402 have the shape of a line extending in the firstdirection. The channel patterns 402 are stacked in a multi-layerstructure while interposing the first insulating interlayer pattern 404there between. In other words, first insulating interlayer patterns 404and the channel patterns 402 may be repeatedly and alternately stackedon the substrate.

A tunnel oxide layer 410 a, a charge trap layer 412 a, and a firstblocking dielectric layer 420 are provided in such a manner that thetunnel oxide layer 410 a, the charge trap layer 412 a, and the firstblocking dielectric layer 420 make direct contact with the sidewall ofthe structure in which the channel pattern 402 and the first insulatinginterlayer pattern 404 are stacked. The first blocking dielectric layer420 may include a plurality of dielectric layers.

The second insulating interlayer patterns 406 having the shape of apillar are formed at the lateral side of the first blocking dielectriclayer 420. Openings 408 are defined between the second insulatinginterlayer patterns 406 to expose both sidewalls of the channel patterns402

The second blocking dielectric layer 422 is formed on the sidewall ofthe opening 408 and exposed the first blocking dielectric layer in theopening 408. The second blocking dielectric layer 422 has a dielectricconstant greater than those of the dielectric layers constituting thefirst blocking dielectric layer 420. The second blocking dielectriclayer 422 includes a first part making contact with the sidewall of thechannel pattern 402 and a second part protruding from the sidewall ofthe channel pattern 402 on the end point of the first part.

The word lines 416 extend perpendicularly to the substrate 400 whilemaking contact with the second blocking dielectric layer 422. In otherwords, the word lines 416 have a shape of a pillar. The word lines 416may have the same structure as those described with reference to FIGS.13 a and 13 b.

The second blocking dielectric layer 422 includes a material having adielectric constant of at least 3.9. The second blocking dielectriclayer 422 may include metallic oxide.

The word line 416 is surrounded by the second blocking dielectric layer422. A portion P of the blocking dielectric layer 422 protruding in alateral direction of the channel pattern 402 serves as the second spacerprovided with a high dielectric constant according to the first exampleembodiment. Accordingly, the back tunneling caused by the concentrationof the electric field on the bending portion of the edge region of theword line 416 is reduced, so that the non-volatile memory deviceaccording to example embodiments have improved erasing operationcharacteristics.

FIGS. 15A and 15B are perspective views showing a method of fabricatingthe vertical gate type non-volatile memory device of FIG. 14A.

Referring to FIG. 15A, a structure that stacks the channel patterns 402and the first insulating interlayer patterns 404 may be formed on asubstrate 100. The structure has the shape of a line extending in thefirst direction. The structure may be formed in the same manner as thatdescribed with reference to FIG. 13A.

The tunnel oxide layer 410 a, the charge trap layer 412 a, and the firstblocking dielectric layer 420 are sequentially formed to cover bothsidewalls of the structure. The first blocking dielectric layer 420 mayinclude a plurality of dielectric layers.

The second insulating interlayer 405 is fully filled in the gap betweenthe structures.

Referring to FIG. 15B, the second insulating interlayer patterns 406having the shape of pillars are formed protruding in a lateral directionof the structure by etching a portion of the second insulatinginterlayer 405. The opening 408 between the second insulating interlayerpatterns 406 may be formed. The first blocking dielectric layer 420 maybe exposed in the opening 408.

Referring to FIG. 14A again, the second blocking dielectric layer 422 isformed on the sidewall of the opening 408 and exposed the first blockingdielectric layer in the opening 408. The second blocking dielectriclayer 422 has a dielectric constant greater than those of the dielectriclayers constituting the first blocking dielectric layer 420. The secondblocking dielectric layer 422 includes the first part making contactwith the sidewall of the channel pattern 402 and the second partprotruding from the sidewall of the channel pattern 402 on the end pointof the first part.

Thereafter, the word line 416 is fully filled in the opening 408 whilemaking contact with the second blocking dielectric layer 422.

Embodiment 10

FIG. 16A is a perspective view showing a part of a vertical gate typenon-volatile memory device according to another example embodiment. FIG.16B is a plan view of FIG. 16A.

Referring to FIGS. 16A and 16B, the vertical gate type non-volatilememory device may include the channel patterns 402 having a multi-layerstructure and word lines 416 having the shape of a pillar which areformed on the substrate 400 while facing the sidewalls of the channelpatterns 402.

The channel patterns 402 have the shape of a line extending in the firstdirection. The channel patterns 402 are stacked in a multi-layerstructure while interposing the first insulating interlayer pattern 404there between. In other words, the first insulating interlayer patterns404 and the channel patterns 402 may be repeatedly and alternatelystacked on the substrate.

The tunnel oxide layer 410 a, the charge trap layer 412 a, and a firstblocking dielectric layer 430 may be sequentially stacked. The tunneloxide layer 410 a may make direct contact with the sidewall of thestructure in which the channel pattern 402 and the first insulatinginterlayer pattern 404 are stacked. The first blocking dielectric layer430 may include a plurality of dielectric layers.

The blocking dielectric layer 430 includes a material having adielectric constant of at least 3.9. The blocking dielectric layer 430may include metallic oxide. If the blocking dielectric layer 430 has amulti-layer structure, the blocking dielectric layer 430 making directcontact with the word line has a dielectric constant greater than thoseof the blocking dielectric layers formed at other layers.

The word lines 416 have the shape of a pillar on the substrate 400 whilemaking contact with the blocking dielectric layer 430. The word lines416 extend in the first direction while being provided in parallel toeach other. The word lines 416 may include a metallic material.

Openings 424 are defined between the word lines 416 to expose theblocking dielectric layer 420.

A high dielectric layer pattern 432 is formed on the sidewall of theopening 434 and exposed the blocking dielectric layer 430 in the opening434. The high dielectric layer pattern 432 is formed on the sidewalls ofthe word lines 416 and the top surface of the blocking dielectric layer430 between word lines 416.

The high dielectric layer pattern 432 has a dielectric constant equal toor greater than that of a dielectric layer making direct contact withthe word line among dielectric layers constituting the blockingdielectric layer 430. The high dielectric layer pattern 432 may includea material the same as that of a dielectric layer constituting theblocking dielectric layer 430. Alternately, the high dielectric layerpattern 432 may include a material different from that of the dielectriclayer constituting the blocking dielectric layer 430.

A second insulating interlayer pattern 436 is formed on the highdielectric layer pattern 432 so that the second insulating interlayerpattern 436 is filled in a gap between the word lines.

The high dielectric layer pattern 432 covers the sidewall of the wordline 416. Accordingly, the high dielectric layer pattern 432 serves asthe second spacer provided with a high dielectric constant according tothe first example embodiment. Accordingly, the back tunneling caused bythe concentration of the electric field at the bending portion of theedge region of the word line 416 is reduced, so that the non-volatilememory device according to example embodiments have improved erasingoperation characteristics.

FIGS. 17A to 17C are perspective views showing a method of fabricatingthe vertical gate type non-volatile memory device of FIG. 16 a.

Referring to FIG. 17A, the structure stacked the channel patterns 402and the first insulating interlayer patterns 404 may be formed on asubstrate 100. The structure has the shape of a line extending in thefirst direction. The structure may be formed in the same manner as thatdescribed with reference to FIG. 13A.

The tunnel oxide layer 410 a, the charge trap layer 412 a, and theblocking dielectric layer 430 are sequentially formed to cover bothsidewalls of the structure. The blocking dielectric layer 430 mayinclude a plurality of dielectric layers.

The blocking dielectric layer 430 includes a material having adielectric constant of at least 3.9. The blocking dielectric layer 430may include metallic oxide. If the blocking dielectric layer 430 has amulti-layer structure, the blocking dielectric layer 430 making directcontact with the word line has a dielectric constant greater than thoseof the blocking dielectric layers formed at other layers.

A conductive layer 415 is formed on the blocking dielectric layer 430 sothat the conductive layer 415 is fully filled in the gap betweenstructures described above. The conductive layer 415 is used to form aword line. The conductive layer 415 may include a metallic material.

Referring to FIG. 17B, the word lines 416 are formed in the shape ofpillars while protruding in a lateral direction of the structure byetching a portion of the conductive layer 415. An opening 434 is definedbetween the word lines 416. The blocking dielectric layer 430 may beexposed in the opening 434.

Referring to FIG. 17C, the high dielectric layer pattern 432 is formedon the sidewall of the opening 434 and exposed the first blockingdielectric layer in the opening 434.

The high dielectric layer pattern 432 has a dielectric constant equal toor greater than that of a dielectric layer making direct contact withthe word line among dielectric layers constituting the blockingdielectric layer 430. The high dielectric layer pattern 432 may includea material the same as that of a dielectric layer constituting theblocking dielectric layer 430. In addition, the high dielectric layerpattern 432 may include a material different from that of the dielectriclayer constituting the blocking dielectric layer 430.

Referring to FIG. 16A again, the second insulating interlayer pattern436 is formed on the high dielectric layer patterns so that the secondinsulating interlayer pattern 436 is fully filled in the opening 434.

Embodiment 11

FIG. 18A is a perspective view showing a part of a vertical gate typenon-volatile memory device according to another example embodiment. FIG.18B is a plan view of FIG. 18 a.

Referring to FIGS. 18A and 18B, the vertical gate type non-volatilememory device may include the channel patterns 402 having a multi-layerstructure and the word lines 416 having the shape of a pillar on thesubstrate 400 while facing the sidewalls of the channel patterns 402.

The channel patterns 402 have the shape of a line extending in the firstdirection. The channel patterns 402 are stacked in a multi-layerstructure while interposing the first insulating interlayer pattern 404there between. In other words, the first insulating interlayer patterns404 and the channel patterns 402 may be repeatedly and alternatelystacked on the substrate.

The tunnel oxide layer 410 a, the charge trap layer 412 a, and a firstblocking dielectric layer 430 may be sequentially stacked. The tunneloxide layer 410 a may make direct contact with the sidewall of thestructure in which the channel pattern 402 and the first insulatinginterlayer pattern 404 are stacked. The blocking dielectric layer 430may include a plurality of dielectric layers.

The blocking dielectric layer 430 includes a material having adielectric constant of at least 3.9. The blocking dielectric layer 430may include metallic oxide. If the blocking dielectric layer 430 has amulti-layer structure, the blocking dielectric layer 430 making directcontact with the word line has a dielectric constant greater than thoseof the blocking dielectric layers formed at other layers.

The word lines 416 having the shape of a pillar on substrate 400 makecontact with the blocking dielectric layer 430. In other words, the wordlines 416 are formed in the first direction in parallel to each other.The word lines 416 include a metallic material.

Openings 434 are defined between the word lines 416 to expose bothsidewalls of the blocking dielectric layer 430.

The high dielectric layer pattern 440 is provided in such a manner thatthe high dielectric layer pattern 440 is fully filled in the opening434. The high dielectric layer pattern 440 may have the shape of apillar making contact with the blocking dielectric layer 430 and thesidewall of the word line 416.

The high dielectric layer pattern 440 has a dielectric constant equal toor greater than that of a dielectric layer making direct contact withthe word line among dielectric layers constituting the blockingdielectric layer 430. The high dielectric layer pattern 440 may includea material the same as that of a dielectric layer constituting theblocking dielectric layer 430. In addition, the high dielectric layerpattern 440 may include a material different from that of the dielectriclayer constituting the blocking dielectric layer 430.

The high dielectric layer pattern 440 covers the sidewall of the wordline 416. Accordingly, the high dielectric layer pattern 440 serves asthe second spacer provided with a high dielectric constant according tothe first example embodiment. Accordingly, the back tunneling caused bythe concentration of the electric field at the bending portion of theedge region of the word line 416 is reduced, so that the non-volatilememory device according to example embodiments has improved erasingoperation characteristics.

The vertical gate type non-volatile memory device illustrated in FIG.18A may be formed in the same manner as that described with reference toFIGS. 17A and 17B.

First, the structure illustrated in FIG. 17B is formed by performing theprocesses the same as those described with reference to FIGS. 17A and17B.

Next, as illustrated in FIG. 18A, the high dielectric layer pattern 440is formed on the blocking dielectric layer while being fully filled inthe opening. Accordingly, the high dielectric layer pattern 440 has theshape of pillars.

The high dielectric layer pattern 440 has a dielectric constant equal toor greater than that of a dielectric layer making direct contact withthe word line among dielectric layers constituting the blockingdielectric layer 430. The high dielectric layer pattern 440 may includea material the same as that of a dielectric layer constituting theblocking dielectric layer 430. Alternately, the high dielectric layerpattern 440 may include a material different from that of the dielectriclayer constituting the blocking dielectric layer 430.

FIG. 19 is a block diagram illustrating a memory system provided withthe non-volatile memory device according to one of the exampleembodiments.

Referring to FIG. 19, a non-volatile memory device 510 is electricallyconnected to a central processing unit (CPU) 520 provided in a memorysystem 500 such as a computer. The memory system 500 may include apersonal computer (PC), a personal data assistant (PDA), and the like.The non-volatile memory device 510 may be directly connected with theCPU 520 or may be connected with the CPU 520 through a bus. Thenon-volatile memory device 510 has a gate structure according to thevarious example embodiments. Accordingly, the non-volatile memory device510 has improved erase saturation characteristics and improvedreliability. Since the non-volatile memory device 510 is applied to thememory system 500, the performance of the memory system 500 can beimproved.

As described above, the non-volatile memory device including the gatestructure according to the example embodiments that have improved erasesaturation characteristics and superior reliability. The non-volatilememory device is applicable to various memory systems and variouselectronic products.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concepts. Accordingly, all such modifications areintended to be included within the scope of the present inventiveconcepts as defined in the claims. In the claims, means-plus-functionclauses are intended to cover the structures described herein asperforming the recited function and not only structural equivalents butalso equivalent structures. Therefore, it is to be understood that theforegoing is illustrative of various example embodiments and is not tobe construed as limited to the specific example embodiments disclosed,and that modifications to the disclosed example embodiments, as well asother example embodiments, are intended to be included within the scopeof the appended claims.

1-20. (canceled)
 21. A vertical type non-volatile memory device, comprising: a channel pattern vertically extending from a substrate; a tunnel oxide layer and a charge trap layer sequentially stacked on a sidewall of the channel pattern; a blocking layer pattern structure including a first portion and a second portion, the first portion being on the charge trap layer, the second portion extending from an end of the first portion to protrude from a sidewall of the channel pattern, and the blocking layer pattern structure having a dielectric constant that is greater than that of the tunnel oxide layer pattern; and at least one word line formed on the first and second portions of the blocking layer pattern structure.
 22. The vertical type non-volatile memory device of claim 21, wherein the second portion of the blocking layer pattern structure contacts an upper surface and a lower surface of the word line, and extends in a horizontal direction.
 23. The vertical type non-volatile memory device of claim 21, wherein the blocking layer pattern structure includes a first blocking layer pattern and a second blocking layer pattern, the first blocking layer pattern contacting the charge trap layer and having a first dielectric constant, and the second blocking layer pattern being on the first blocking layer pattern and having a second dielectric constant that is greater than the first dielectric constant.
 24. The vertical type non-volatile memory device of claim 23, wherein the first blocking layer pattern includes the first portion, and the second blocking layer pattern includes both of the first and second portions.
 25. The vertical type non-volatile memory device of claim 24, wherein the second portion of the second blocking layer pattern contacts an upper surface and a lower surface of the word line.
 26. The vertical type non-volatile memory device of claim 21, wherein the at least one word line includes a plurality of word lines that are vertically spaced apart from each other on the sidewall of the channel pattern.
 27. The vertical type non-volatile memory device of claim 26, further comprising: insulating interlayer patterns that are disposed between the word lines on the sidewall of the channel pattern.
 28. The vertical type non-volatile memory device of claim 27, wherein the second portion of the blocking layer pattern structure is on surfaces of the insulating interlayer patterns.
 29. The vertical type non-volatile memory device of claim 21, wherein at least one of the tunnel oxide layer and the charge trap layer extends on surfaces of the insulating interlayer patterns and the channel pattern.
 30. The vertical type non-volatile memory device of claim 21, wherein the tunnel oxide layer and the charge trap layer are stacked on an entire surface of the channel pattern.
 31. The vertical type non-volatile memory device of claim 21, wherein the blocking layer pattern structure includes any one selected from the group consisting of aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO₃), lanthanum hafnium oxide (LaHfO), hafnium aluminum oxide (HfAlO), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), and zirconium oxide (ZrO₂).
 32. The vertical type non-volatile memory device of claim 21, wherein the word line includes a barrier layer pattern and a metal layer pattern.
 33. A vertical type non-volatile memory device, comprising: a channel pattern vertically extending from a substrate, the channel pattern having a pillar shape; a tunnel oxide layer and a charge trap layer sequentially stacked on a sidewall of the channel pattern; insulating interlayer patterns vertically spaced apart from each other on a sidewall of the channel pattern; a blocking layer pattern structure including a first portion and a second portion, the first portion being on the charge trap layer, the second portion extending on surfaces of the insulating interlayer patterns, and the blocking layer pattern structure having a dielectric constant that is greater than that of the tunnel oxide layer pattern; and word lines being between the insulating interlayer patterns and contacting the first and second portions of the blocking layer pattern structure.
 34. The vertical type non-volatile memory device of claim 33, wherein the blocking layer pattern structure includes a first blocking layer pattern and a second blocking layer pattern, the first blocking layer pattern contacting the charge trap layer and having a first dielectric constant, and the second blocking layer pattern being on the first blocking layer pattern and having a second dielectric constant that is greater than the first dielectric constant.
 35. The vertical type non-volatile memory device of claim 33, wherein the blocking layer pattern structure includes any one selected from the group consisting of aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO₃), lanthanum hafnium oxide (LaHfO), hafnium aluminum oxide (HfAlO), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), and zirconium oxide (ZrO₂). 